- 您现在的位置：买卖IC网 > Sheet目录406 > DMN3200U-7 (Diodes Inc)MOSFET N-CH 30V 2.2A SOT23-3
DMN3200U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
?
Low On-Resistance
?
Case: SOT-23
?
?
?
90 m ? @ V GS = 4.5V
110 m ? @ V GS = 2.5V
200 m ? @ V GS = 1.5V
?
?
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
?
?
?
?
?
Very Low Gate Threshold Voltage
Low Input Capacitance
ESD Protected Gate
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
?
?
?
Terminal Connections: See Diagram
Terminals: Finish ? Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208 e3
Weight: 0.008 grams (approximate)
Drain
D
Gate
ESD PROTECTED TO 3kV
TOP VIEW
Gate
Protection
Diode
Source
G
S
Equivalent Circuit
TOP VIEW
Ordering Information
(Note 4)
Part Number
DMN3200U-7
Case
SOT-23
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
32N = Marking Code
32N
Chengdu A/T Site
Date Code Key
32N
Shanghai A/T Site
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN3200U
Document number: DS31188 Rev. 5 - 2
1 of 5
www.diodes.com
October 2013
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
DMN32D2LDF-7
MOSFET 2N-CH 30V 400MA SOT353
DMN32D2LFB4-7
MOSFET N-CH 30V 300MA 3-DFN
DMN32D2LV-7
MOSFET N-CH DUAL 30V SOT-563
DMN3300U-7
MOSFET N-CH 30V 2A SOT23-3
DMN3404L-7
MOSFET N-CH 30V 5.8A SOT-23
DMN3730U-7
MOSFET N-CH 30V 750MA SOT23
DMN3730UFB-7
MOSFET N-CH 30V 750MA DFN
DMN3730UFB4-7
MOSFET N-CH 30V 750MA DFN
相关代理商/技术参数
DMN32D2LDF
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:COMMON SOURCE DUAL N-CHANNEL
DMN32D2LDF-7
功能描述:MOSFET 350mw 30V DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN32D2LFB4
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN32D2LFB4-7
功能描述:MOSFET 350mW 30Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN32D2LV
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN32D2LV-7
功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3300U
制造商:Diodes Incorporated 功能描述:MOSFET N CH W DIODE 30V 2A SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 2A, SOT23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, W DIODE, 30V, 2A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:600mW ;RoHS Compliant: Yes
DMN3300U-7
功能描述:MOSFET 600mW 30Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube